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NETSOL STT-MRAM S3A1604V0M規(guī)格書

2024-03-06 09:29:22

General Description
S3A1604V0M is  Spin-Transfer-Torque Magneto-resistive Random Access Memory (STT-MRAM). It features a SPI bus interface, XIP(execute-in-place) functionality, and hardware/software based data protection mechanisms. SPI (Serial Peripheral Interface) is a synchronous serial communication interface with command, address and data signals.It requires less pin counts than parallel interface and is easy to be configured on the system.The device is offered in density ranging from 1Mbit to 16Mbit. The device can replace Flash, FRAM or (nv)SRAM with same functionality and non-volatility.
 
Feature
•Supports Serial Peripheral Interface with Mode 0 and Mode 3
- Single SPI (1-1-1, 1-1-2, 1-2-2, 1-1-4, 1-4-4)
- Dual SPI (2-2-2)
- Quad SPI (4-4-4)
•Operating Frequency
- Single Data Rates (SDR) : 108MHz
- Double Data Rates (DDR) : 54MHz
•Supports XIP for read and write operations
•Fast write time and single byte writable
•Data protection
- WP pin write protection
- Block lock protection
•Nonvolatile status and configuration registers
•Identification
- 64-bit unique ID
- 64-bit serial number - user writable
•Augmented 256-byte nonvolatile-area
- Read and write with user-protection
l Deep power down for low-power
•Supports JEDEC reset
•Memory cell : STT-MRAM
•Density
- 16Mb
•Data Integrity : No external ECC required
•Data Endurance
- Unlimited read cycle
- 1014 write cycles
•Data Retention
- 10 years at 85℃
•Single Power Supply Operation
- S3A1604V0M: 2.70V~3.60V
•Operating Temperature Range
- Commercial Temperature : 0℃ to 70℃
- Industrial Temperature : -40℃ to 85℃
•RoHS compliant packages
- 8pad WSON (5.0mm x 6.0mm)
- 8pin SOIC (150mil)

本文關(guān)鍵詞:STT-MRAM,S3A1604V0M

相關(guān)文章:MRAM優(yōu)勢(shì)及應(yīng)用場(chǎng)景


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